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In the final installment of his article series "DDR5 Electrical and Timing Measurement Techniques," Randy White explores how following a standard workflow for setting up thresholds and timings to distinguish bursts in DDR5 memory interfaces can make design validation much more efficient, ultimately ensuring compliance with specifications and improving system margin by identifying and resolving any issues, especially those related to either read or write transactions.
The new R&S NRP170TWG(N) sensors from Rohde & Schwarz are used in general R&D for 6G mobile communications, novel sub-THz communications, sensing, and future automotive radar applications.
With its robust design, integrated Swissbit powersafe PLP technology, and advanced security features, the N3202 is engineered to deliver unmatched reliability and endurance.
IDTechEx's research conducted in "Automotive Radar 2024-2044: Forecasts, Technologies, Applications" shows that, on average, 70% of new cars shipped in 2022 had a front-facing radar, while 30% had side radars.
In this installment of Practical EMC, Kenneth Wyatt discusses the most common design issues for reducing self-generated EMI and outlines several mitigation techniques that have proved successful for challenging wireless products.
COMSOL has announced the release of COMSOL Multiphysics version 6.2, adding data-driven surrogate model functionality for efficient standalone simulation apps and multiphysics-based digital twins
In a significant development for the world of AME, J.A.M.E.S announces a strategic partnership with APES. This collaboration is set to drive innovation, amplify brand awareness, and foster groundbreaking advancements in the field of 3D Printed Electronics.
In this article, Donald Telian explains why discontinuities do not sum the same way as loss. Telian outlines that a failing an RL mask might indicate that Tx or Rx are simply too close to a discontinuity, causing the discontinuity proximity effect. Read on to learn more about how to to distance SerDes from discontinuities.
GlobalFoundries (GF) has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated GaN on silicon semiconductors.
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