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The new version of EMF Visual is even more powerful thanks to advanced features. It now uses GPU resources, which provide coverage of larger areas for exposure evaluation and enables the use of the Geographical Information System (GIS) database or 3D objects conversion for direct loading of virtual 3D scenes, while interfacing with SketchUp software. In addition, the new version allows users to assign material properties to the entire surrounding 3D environment in order to take into account their impact on exposure levels, while still making fast calculations.

You would think that interconnect design for rf applications and high-speed digital applications would be very similar. After all, the upper frequency range of the applications are similar. Here area few examples of how rf engineering is different from high speed digital engineering.

There are many questions about measuring Power Delivery Networks (PDN), but these two are very common ones.  Why do we calibrate the 2-port measurement with a 1Ω shunt resistor and why do I use DC blockers on both ports?  In this article I’ll provide responses to both of these questions.  The measurement setup in Figure 1 is an example where I used both the 1Ω calibration and the inclusion of the DC blockers.

As systems designers work hard to squeeze more and more features into less board space, the power delivery paths are becoming increasingly complex. The current mature VRM designs based on Silicon MOSFETs are hardly meeting present day requirements. One of the promising technologies touted to solve this conundrum of space and performance constraints is GaN HEMT. However, many engineers are hesitant to design very high frequency GaN VRMs from the ground up. This paper evaluates the steps required to modify existing Si-MOSFET designs for use with eGaN HEMT devices. The paper also compares the expected performance of GaN vs. Si in linear and switching regulator topologies and covers some of the measurement challenges as well.