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Phase Noise Aliases as TIE Jitter
By Gary Giust
This article presents a simple experiment to illustrate how phase noise converts to time-interval error (TIE) jitter. This is of particular interest to hardware professionals who work with both jitter and phase noise, such as engineers analyzing reference clocks for high-speed SERDES, or sampling clocks for data converter, applications. Insight gained from this article can be used when debugging systems to identify and reduce various sources of timing noise.
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Samtec Introduces New VITA 42 XMC 12 Mm Mated Connector Sets
As an ANSI/VITA member, Samtec has released new connector sets compliant with the revised ANSI/VITA 42.0-2016 XMC Standard. VITA 42 XMC defines an open standard for supporting high-speed, switched interconnect protocols on an existing, widely deployed form factor.
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Economic Solderless PCB Connectors up to 70 GHz
For a variety of standard applications up to 70 GHz Rosenberger provides cost-effective, economic solderless PCB connectors which can be easily assembled to printed circuit boards by using screws. The product range consists of RPC-3.50 (up to 26.5 GHz), RPC-2.92 (up to 40 GHz), RPC-2.40 (up to 50 GHz) and RPC-1.85 (up to 70 GHz) straight female connectors characterized by low return loss values and high mating cycles (≥ 500).
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Optimize Doherty Power Amplifiers
By Rohde & Schwarz
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How to Measure Ultra-Low Impedance (100uOhm and lower) PDNs
Wednesday, October 17, 9-11AM
Speaker, Steve Sandler
Measuring ultra-low impedance is a common requirement for assuring power integrity. This meant measuring 1 milliOhm to 2 milliOhm voltage regulator modules (VRM’s) and power distribution networks or (PDN’s). Every year we talked about how operating voltages are falling and frequency is increasing. Maybe some of us realized this meant higher operating current and therefore lower impedance.
You’ll learn the pros and cons of the 2-port vs 3-port measurement technique. With a little bit of luck, we’ll demonstrate a 100uOhm impedance measurement as well as showing some measurements highlight the challenges you’ll face along the way. Learn more and register today.
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GaN for DC to DC Converters and Voltage Regulators
GaN offers many advantages compared to silicon MOSFETS, including smaller size, lower on state resistance, more stable gate voltage, much lower capacitance resulting in higher speed, lower inductance connection inductance and manufacturable using existing silicon wafer fabs and the promise of lower cost. With all of these benefits, mass adoption should be instantaneous, right? Yet, engineers are slow to change, in part due to a lack of credible information and in part due to fear of the unknown.
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Visit our archived webinars page for educational resources on various design and measurement subjects and view at your convenience.
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