The design is built around a Teledyne e2v QLS1046-Space edge computing module that is configured by the radiation-hardened 64MByte Infineon SONOS based NOR Flash memory, enabling high performance space processing applications.
The automotive-graded SiC MOSFET generation offers high power density and efficiency, enables bi-directional charging, and significantly reduces system cost in on-board charging and DC-DC applications.
Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing additional module platforms and topologies for the 1200 V CoolSiC™ MOSFET family. Infineon is now able to bring the potential of SiC technology to a new level.