August 14, 2018

Sponsored by: EDI CON USA



IEEE EMC+SIPI 2018 Exhibition Summary

By Pat Hindle

The 2018 IEEE EMC+SIPI event returned to Long Beach, CA after last visiting in 2011. The event continues to include Signal Integrity & Power Integrity (SIPI) as part of the conference, reflecting the EMC Society’s influence and focus on this critical topic of engineering design. Engineers can join the event via computer or mobile device and view content online. Learn about the products and highlights we found interesting from the exhibition.

TE Connectivity  

TE Connectivity Introduces Next-generation Free Height Connectors

TE Connectivity (TE), introduced its next-generation 0.8mm free height board-to-board connectors, which achieve speeds of 32 Gbps and higher. These high-speed, mid-density mezzanine solutions deliver an excellent price-to-performance ratio and are 56 Gbps PAM-4 and PCIe Gen 5 capable for future upgrades.


Tektronix Delivers More Speed & Lowest Noise with 6 Series MSO Mixed Signal Oscilloscope

Tektronix, Inc., introduced the 6 Series MSO mixed signal oscilloscope. The new oscilloscope extends the performance of midrange oscilloscopes to 8 GHz and delivers a 25 GS/s sample rate simultaneously on all 4 channels. A first for this oscilloscope class, while accommodating the needs of designers working on faster, more complex embedded system designs.



SI/PI/EMI Consultants


SI/PI/EMI Consultants

Sometimes you need an assist with an SI, PI, or EMI issue. If you need help, check out this list of consultants working in signal integrity, power integrity, and EMC/EMI.

EDI CON University Session

Real Time Spectral Analysis of Power Rail Noise

Thursday, October 18, 9-11AM
Speaker, Eric Bogatin

In this EDI CON UNIVERSITY session on October 18th at 9AM, we introduce the best measurement practices for analyzing the real time spectra of signals and apply these methods to power rail noise to provide insight into the root cause of the problems. Learn more and register today.

Upcoming Webinars

Rohde & Schwarz  

GaN for DC to DC Converters and Voltage Regulators

GaN offers many advantages compared to silicon MOSFETS, including smaller size, lower on state resistance, more stable gate voltage, much lower capacitance resulting in higher speed, lower inductance connection inductance and manufacturable using existing silicon wafer fabs and the promise of lower cost. With all of these benefits, mass adoption should be instantaneous, right? Yet, engineers are slow to change, in part due to a lack of credible information and in part due to fear of the unknown.

Visit our archived webinars page for educational resources on various design and measurement subjects and view at your convenience.
Browse webinars here.

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