Power Integrity

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Power GaN 2025, powered by Yole Group, provides a detailed look at the market growth, technology trends, and strategic shifts shaping the gallium nitride power device industry. 

Designed for point of load power rails in commercial space systems and other extreme environments, the new device is particularly well-suited for distributed satellite power systems and digital processing payloads, including FPGA and ASIC systems.

Infineon has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability.

Infineon is further advancing on its path to become a leading GaN powerhouse and bolstering its position as the world’s leader in automotive semiconductors by introducing its first GaN transistor family qualified to the AEC standard for automotive applications.

Continuously improving efficiency, power density, and signal integrity of power conversion from the grid to the core is therefore critical to advancing computing performance while reducing total cost of ownership. To address this need, Infineon is launching the OptiMOS™ TDM22545T dual-phase power module, the industry's first TLVR module specifically designed for high-performance AI data centers.

In this article, Tyler Huddleston explores causality in relation to signal and power integrity simulations. He reviews how causality affects time-domain simulation fidelity as well as how non-causal s-parameters can result from real measurements and simulations. Learn about how non-causal data can be avoided and the consequences of using a non-causal model in time-domain simulations.

Infineon Technologies AG introduces a 12 kW reference design for high-performance power supply units, specifically designed for AI data centers and server applications.

Infineon has announced the strengthening of its existing collaboration with Delta Electronics, Inc., in the development of state-of-the-art high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers.

Infineon Technologies AG is expanding its CoolSiC™ MOSFETs 650 V G2 portfolio with new 75 mΩ variants to meet the demand for more compact and powerful systems.

AI data centers are power hungry, pushing power density to new highs while requiring long-term reliability. The increasing power density, particularly at the board and rack levels, creates challenges for stability and the unpredictable high-current surges resulting from these many-core applications.  These difficulties are driving a significant amount of new development in capacitors while also inspiring the repurposing of older technologies. Sandler examines the opportunities and challenges presented by evolving demands in the power integrity sector.