Power Integrity

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Richardson RFPD, Inc. announced the expanded availability of Wolfspeed’s Gen 4 SiC MOSFET platform, engineered to deliver efficiency, simplified switching behavior, and long‑term reliability for today’s most demanding high‑power applications.

Infineon Technologies AG expands its CoolGaN™ portfolio with the CoolGaN Drive HB 600 V G5 product family.

Infineon has announced that CoolSiC™ MOSFETs have been adopted in the new bZ4X model from Toyota, the world's largest automaker.

Vishay Intertechnology, Inc. has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

Würth Elektronik now also offers its WE-LT conductive textile gaskets in a halogen-free version.

The power SiC device market is forecast to approach $10 billion by 2030.

Spacechips has introduced its AI1 transponder, a small on-board processor card containing an adaptive compute acceleration platform AI accelerator.

Breakthrough Bypass Dual Duty-Cycle architecture minimizes voltage droop and accelerates AI workloads, setting a new industry benchmark.

The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96%. With their low quiescent current of 4 µA, they are also suitable for battery-powered applications.

As Ray Kurzweil’s predictions edge closer to reality, AI continues to transform engineering, education, and daily life. Follow along as Signal Integrity Journal Technical Editor Eric Bogatin examines the risks and rewards of technological evolution while reflecting on the role of humans in an AI-driven future.