Infineon Technologies AG introduces a 62 mm half-bridge and common emitter module portfolio with 1200 V TRENCHSTOP™ IGBT7 chips. The wide range of offerings in the proven 62 mm housing is extended with the new 800 A maximum current class for the package family. The addition to the portfolio’s current classes provides system designers with a high degree of flexibility in designing higher current power solutions while offering higher power density and electrical performance. It is tailored to meet the needs of solar central inverters as well as industrial drive applications and uninterruptible power supplies. Additionally, EV charging, energy storage systems, and other new industrial applications can be covered.
Based on the new micro-pattern trench technology, the 62 mm module family with the 1200 V TRENCHSTOP IGBT7 chip has significantly lower static losses compared to the modules with the IGBT4 chipset. This results in significant loss reduction in applications, especially in industrial drives that typically operate at moderate switching frequencies. The IGBT’s oscillation behavior and controllability have been improved. In addition, the new power modules feature a maximum overload junction temperature of 175°C.
A solid, nickel-coated copper baseplate and screw main terminals ensure the high mechanical robustness of the 62 mm module housing. The main terminals are located in the center of the housing, making them well suited for parallel circuits and 3-level configurations due to the low inductive DC link connection. Unchanged standard package design and dimensions within the module family support mechanical compatibility with the previous module version. In addition, all modules are available with Infineon’s proven pre-applied thermal interface material.