Richardson RFPD, Inc. announced the availability and full design support capabilities for a new family of 650 V GaN E-HEMTs from GaN Systems Inc.

The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

  • Industry standard 5 mm x 6 mm PDFN packages
  • Assembly using standard SMT process
  • Scalable: 3.5 A to 11 A in the same footprint
  • Fast, clean switching speed
  • High switching frequency (20 MHz+)
  • Low switching losses
  • Low EMI
  • High efficiency
  • Kelvin sense
  • Zero Qrr
  • Bottom side cooling

Additional key features of the GS-065-0xx-1-L include:

Part Number

Voltage (V)

Current RDS(on)

Package / Size




3.5 A
500 mΩ

5 x 6 PDFN



8 A
225 mΩ

5 x 6 PDFN



11 A
150 mΩ

5 x 6 PDFN

To find more information, or to purchase this product today online, please visit the GS-065-0xx-1-L webpage; or please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from GaN Systems, please visit the GaN Systems storefront webpage.