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The GaN transistors GS-065-060-3-B/T provide low RDS(on) (25 mΩ) and feature a 60 A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield.
The E-Series MOSFETs are optimized for use in EV battery chargers and high voltage DC/DC converters for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications.
