Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new insulated metal substrate (IMS) evaluation platform from GaN Systems Inc.
The platform consists of a motherboard (GSP65MB-EVB) and two IMS evaluation modules. The modules can be configured as a half-bridge (single IMS module) or a full-bridge (two IMS modules) on the high-power motherboard. The IMS evaluation modules are available in two power levels, the 3 kW GSP65R25HB-EVB and the 6 kW GSP65R13HB-EVB. The modules include GaN E-HEMTs, gate drivers, an isolated DC/DC supply, DC bus decoupling capacitors, and a heatsink to form a fully-functional, half-bridge power stage.
The new platform provides a flexible, low-cost, high-power development platform for high-efficiency power systems with 3 kW or higher applications. In combination with GaNPX packaging technology and smart design techniques, it enables power engineers to quickly take full advantage of GaN power transistors in designing smaller, lighter, lower cost, and more efficient power systems for data center, automotive, and energy storage system applications.
Additional key features of the new IMS evaluation platform include:
- Low thermal resistance and optimized layout
- Modules can be used independently as a high-power GaN intelligent power module with developers’ own system boards for in-system prototyping
- Greater power density
To find more information, or to purchase this product, please visit the GaN Systems IMS Evaluation Platform webpage. The platform is also available by calling 1-800-737-6937 (within North America); or please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from GaN Systems, please visit the GaN Systems storefront webpage.