Integra announced it has begun production shipments to U.S. and European customers of its groundbreaking 100 V RF GaN technology. Tom Kole, Integra’s Vice President of Sales and Marketing, said “In collaboration with our customers, our system engineers have helped design new radar architectures that take full advantage of the benefits of our third generation 100 V RF GaN technology.  It’s exciting to see Integra’s 100 V RF GaN products move into production with customers as it signifies another industry first.”     

Integra also announced expansion of their 100 V RF GaN product portfolio with the introduction of 7 products for avionics, directed energy, electronic warfare, radar, and scientific market segments with power levels up to 5 kW in a single transistor. These products incorporate Integra’s 100 V RF GaN technology optimized to deliver the highest power and efficiency in a single transistor while maintaining reliable operating junction temperatures. Combined with Integra’s thermally enhanced patents and transistor design expertise, these products offer reliable operation with a MTTF of 10⁷ hours. Suja Ramnath, Integra’s President and CEO, said, “Integra has spent a decade innovating, maturing, and commercializing our groundbreaking 100 V RF GaN technology.  Building upon our twenty-five-year heritage of semiconductor innovation, this third generation 100 V RF GaN continues to extend our technical and market leadership.”

Additionally, Integra’s partner Teledyne e2v HiRel is offering high reliability options for all of Integra's 100 V RF GaN power devices and pallets targeted at the defense market. Brad Little, Vice President and General Manager of Teledyne e2v HiRel, said, “Our space customers can benefit from Integra’s 100 V RF GaN products combined with Teledyne’s expertise and long heritage providing space RF components. These innovative products offer space payload engineers state-of-the-art power devices for insertion into their applications.”

100 V RF GaN Parts Introduced: