GaN Systems announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high-speed gate-driver evaluation board.

This evaluation board is developed for existing and new PCB designs and allows designers to evaluate GaN in existing half−bridge or full−bridge power supplies. The kit has a reduced component count in a 25mm x 25mm layout. Features, which include 1+ MHz operation and a 200 V/ns CMTI rating, provide increased power density and improved performance with fast-switching GaN power transistors.

Benefits include significant reductions in power losses, weight, size (up to 80% in layout size), and system costs (up to 60% BOM cost savings) and is well suited in applications such as AC-DC adapters, data center power supplies, PV inverters, energy storage systems, and Bridgeless Totem Pole topologies. This product is one of many upcoming GaN-based power system products that both companies are developing.

More information: www.gansystems.com or www.onsemi.com.