Feng (Dan) Lin received the Ph.D. degree in Electrical Engineering (EE) from the University of Idaho, Boise, ID in 2000, and M.S. and B.S. degrees in EE from the University of Electrical Science and Technology of China in 1995 and 1992 respectively. He joined DRAM Design R&D at Micron Technology, Inc., Boise in 2000, focusing on the development of high-speed, leading edge DRAM for high-performance computing. He most recently serves as the lead designer in Signal Integrity R&D team for advanced memory architecture and future I/O development. Dr. Lin is a co-author of the textbook DRAM Circuit Design, Fundamental and High-Speed Topics (Wiley-IEEE Press, 2008). Dr. Lin holds over 117 U.S. and foreign patents to date.