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The new SiC MOSFETs are enhancing Infineon’s comprehensive CoolSiC portfolio and are optimized for the lowest losses, the highest reliability, and ease-of-use.
The addition to the portfolio’s current classes provides system designers with a high degree of flexibility in designing higher current power solutions while offering higher power density and electrical performance.
The Power PROFET + 12 V allows for new mounting locations and new enclosure options, enabling the next generation of decentralized power architectures with high efficiency.
To meet the latest design and application needs, Infineon Technologies AG introduces the next generation of the EiceDRIVER product family of dual-channel galvanically isolated gate driver ICs.
Infineon Technologies AG today announced the OptiMOS 7 40V MOSFET family, its latest generation of power MOSFETs for automotive applications in a variety of lead-free and robust power packages.
To meet demands for fast-charging protocol in USB-C-based DC power sources,
Infineon Technologies AGhas released the EZ-PD PMG1-B1 complementing the EZ-PD PMG1 family of high-voltage microcontrollers with USB-C power delivery.
Infineon Technologies AG and GaN Systems announced that the companies have signed a definitive agreement under which Infineon will acquire GaN Systems for $830 million.
