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The new devices deliver optimized thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability.
As the demand for gallium nitride semiconductors continues to grow, Infineon is poised to capitalize on this trend and solidify its position as a leading IDM in the GaN market.
Infineon's new CoolSiC JFET devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency.
Through enhanced system performance and with Infineon’s trademark robustness, the new OptiMOS TDM2454xx quad-phase power modules enable best-in-class power density and total-cost-of-ownership for AI data centers operators.
The new device offers a fast quad serial peripheral interface and the highest density, radiation, and single-event effects performance available in a fully QML-qualified non-volatile memory for use with space-grade FPGAs and microprocessors.
