Items Tagged with 'GaN'

Patented set of technologies unleashes GaN to operate at up to 20 MHz for the first time without overheating or RF issues, opening up a vast new application area for GaN.

By augmenting its cascode offering with seven new e-mode devices, Nexperia now provides designers with the optimum choice of GaN FETs from a single supplier alongside its substantial portfolio of silicon-based power electronics components.

Infineon Technologies AG and GaN Systems announced that the companies have signed a definitive agreement under which Infineon will acquire GaN Systems for $830 million.

Infineon Technologies AG is strengthening its market leadership in power semiconductors by adding manufacturing capacities in the field of wide bandgap (SiC and GaN) semiconductors. 

CAES introduced the industry’s first single-stage, isolated DC-DC converters for high throughput satellite payloads, providing spacecraft designers with the industry’s most efficient power conversion modules for enabling reprogrammable, software-defined payloads.

Check out this description of what is likely the fastest GaN edge-speed ever recorded.