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Infineon Technologies, a global leader in power semiconductors and IoT, has published the 2026 edition of its annual GaN Insights, providing valuable awareness into the world of GaN technology, its applications, and future prospects.
Power GaN 2025, powered by Yole Group, provides a detailed look at the market growth, technology trends, and strategic shifts shaping the gallium nitride power device industry.
Infineon is further advancing on its path to become a leading GaN powerhouse and bolstering its position as the world’s leader in automotive semiconductors by introducing its first GaN transistor family qualified to the AEC standard for automotive applications.
As the demand for gallium nitride semiconductors continues to grow, Infineon is poised to capitalize on this trend and solidify its position as a leading IDM in the GaN market.
The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency.
Richardson Electronics, Ltd. and Navitas Semiconductor have announced an expanded distribution partnership for next-gen silicon carbide power semiconductors for Europe, the Middle East, and Africa.
Infineon has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 μm and a diameter of 300 mm, in a high-scale semiconductor fab.
The power electronics supply chain has undergone a phase of rapid expansion in manufacturing capacity, particularly for SiC and silicon devices, as well as SiC wafers.
