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Infineon Technologies AG introduces the 750V G1 discrete CoolSiC MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
To help developers implement SiC solutions and fast-track the development process, Microchip Technology introduces the 3.3 kV XIFM plug-and-play mSiC gate driver with patented augmented switching technology, which is designed to work out-of-the-box with preconfigured module settings to significantly reduce design and evaluation time.
Infineon Technologies AG detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), February 25-29.
The decarbonization trend will result in strong market growth for power semiconductors, in particular those based on wide bandgap materials. Infineon Technologies AG is now taking a further, decisive step to shape this market by significantly expanding its Kulim fab.
The automotive-graded SiC MOSFET generation offers high power density and efficiency, enables bi-directional charging, and significantly reduces system cost in on-board charging and DC-DC applications.
Next-generation SiC diodes combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.
To provide BEV and HEV designers with a faster, more reliable high-voltage circuit protection solution, Microchip Technology has announced the E-Fuse Demonstrator Board, enabled by SiC technology, available in six variants.