Supplied in a multi-chip package (MCP) format, each Teledyne e2v DDR4T04G72 memory features expansive bus capabilities, where 64bits are assigned to data transfer and an additional 8bits for error correction. The DDR4T04G72 is an optimal companion for the company’s own Qormino® processors, and is also compatible with most processors, SoCs, and FPGAs from other vendors.

The TD99102 UltraCMOS^® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The flip chip part is ideal for driving Teledyne HiRel’s 100 V high reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules and space motor drives.

Teledyne e2v HiRel announced availability of a pair of the latest isolated gate drivers ideally suited for driving GaN power parts used in a wide variety of power supply, dc/dc converter, battery management systems (BMS), Point-of-Load (POL) modules and motor control applications.

Wide output bandwidth 12-bit (or 8-bit) data converter can deal with sample rates of up to 12 GSamples/s. It has the capacity to generate signal waveforms over multiple frequency bands. 

Teledyne e2v has announced the DDR4T04G72M. The first radiation-tolerant DDR4 memory chip, featuring a total 4GB capacity.