Power Integrity

RSS

Richardson RFPD, Inc. announced the expanded availability of Wolfspeed’s Gen 4 SiC MOSFET platform, engineered to deliver efficiency, simplified switching behavior, and long‑term reliability for today’s most demanding high‑power applications.

Infineon Technologies AG expands its CoolGaN™ portfolio with the CoolGaN Drive HB 600 V G5 product family.

This article describes the use of Cadence’s Sigrity signal and power integrity solution ML optimization algorithm to quickly and efficiently converge on the best set of parameters in a set of IBIS-AMI models. The application of Sigrity was investigated for refining IBIS- AMI parameters to find the optimal set of values to maximize a specific metric.

Infineon has announced that CoolSiC™ MOSFETs have been adopted in the new bZ4X model from Toyota, the world's largest automaker.

Vishay Intertechnology, Inc. has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

Würth Elektronik now also offers its WE-LT conductive textile gaskets in a halogen-free version.

The power SiC device market is forecast to approach $10 billion by 2030.

Spacechips has introduced its AI1 transponder, a small on-board processor card containing an adaptive compute acceleration platform AI accelerator.

Breakthrough Bypass Dual Duty-Cycle architecture minimizes voltage droop and accelerates AI workloads, setting a new industry benchmark.

The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96%. With their low quiescent current of 4 µA, they are also suitable for battery-powered applications.