We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Cookie Policy.
Infineon is further advancing on its path to become a leading GaN powerhouse and bolstering its position as the world’s leader in automotive semiconductors by introducing its first GaN transistor family qualified to the AEC standard for automotive applications.
The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency.
In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20% better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions.
Infineon announces two new generations of high voltage and medium voltage CoolGaN TM devices, which now enable customers to use GaN in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization.
Teledyne e2v HiRelannounces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors.
