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Infineon has expanded its CoolSiC MOSFETs 400 V G2 portfolio with the top-side-cooled TOLT package as well as the TO-247-3 and TO-247-4 packages. In addition, three new products in the TOLL package have been introduced, with rated voltages of 440 V (continuous) and 455 V (transient).
Infineon Technologies AG is expanding its CoolSiC™ MOSFETs 650 V G2 portfolio with new 75 mΩ variants to meet the demand for more compact and powerful systems.
The new devices deliver optimized thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability.
Infineon's new CoolSiC JFET devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability, even under demanding high voltage and switching frequency conditions.
Infineon Technologies AG introduces the 750V G1 discrete CoolSiC MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
The new SiC MOSFETs are enhancing Infineon’s comprehensive CoolSiC portfolio and are optimized for the lowest losses, the highest reliability, and ease-of-use.
