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Richardson RFPD, Inc. announced the expanded availability of Wolfspeed’s Gen 4 SiC MOSFET platform, engineered to deliver efficiency, simplified switching behavior, and long‑term reliability for today’s most demanding high‑power applications.
Infineon has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability.
Infineon has expanded its CoolSiC MOSFETs 400 V G2 portfolio with the top-side-cooled TOLT package as well as the TO-247-3 and TO-247-4 packages. In addition, three new products in the TOLL package have been introduced, with rated voltages of 440 V (continuous) and 455 V (transient).
Infineon Technologies AG is expanding its CoolSiC™ MOSFETs 650 V G2 portfolio with new 75 mΩ variants to meet the demand for more compact and powerful systems.
By expanding the current PQFN 2x2 portfolio with the new best-in-class OptiMOS™ power MOSFETs, Infineon Technologies AG offers benchmark solutions optimized for efficiency and performance in a small footprint.
The new SiC MOSFETs are enhancing Infineon’s comprehensive CoolSiC portfolio and are optimized for the lowest losses, the highest reliability, and ease-of-use.
Nexperia announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging.
The automotive-graded SiC MOSFET generation offers high power density and efficiency, enables bi-directional charging, and significantly reduces system cost in on-board charging and DC-DC applications.
