We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Cookie Policy.
Vishay Intertechnology, Inc. has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.
The new devices deliver optimized thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability.
Infineon announced that its OptiMOS 6 80V power MOSFETs in a compact 5x6 mm² dual side cooling package have been integrated into the IBC stage of an AI server platform of a leading processor manufacturer.
To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. has introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package.
Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability, even under demanding high voltage and switching frequency conditions.
For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency while enhancing thermal performance, reducing component counts, and simplifying designs.
Infineon Technologies AG introduces the 750V G1 discrete CoolSiC MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
