Articles Tagged with ''Infineon''

Infineon has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 μm and a diameter of 300 mm, in a high-scale semiconductor fab.

Infineon Technologies AG has announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride wafer technology.

In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20% better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions.

Infineon Technologies AG today announced two new CoolGaN product technologies, CoolGaN bidirectional switch and CoolGaN Smart Sense.

Infineon announces two new generations of high voltage and medium voltage CoolGaN TM devices, which now enable customers to use GaN in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. 

Infineon Technologies AG introduces the MOTIX TLE9140EQW gate driver IC for brushless DC motors targeting the demanding 24/48 V market.

Motor drive applications are taking a leap forward with the launch of the Infineon OptiMOS 6 200 V MOSFET product family.

Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability, even under demanding high voltage and switching frequency conditions.

Infineon Technologies AG has opened a new laboratory for the development of quantum electronics in Oberhaching near Munich.