Items Tagged with 'SweGaN'


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‘Buffer-free’ Concept for GaN-on-SiC High Electron Mobility Transistors Reveals Competitive Efficiency

In a joint study with the Chalmers University of Technology Department of Microtechnology and Nanoscience, SweGaN explored QuanFINE® epitaxial wafer performance, based on GaN HEMT technology at Chalmers, Gothenburg, Sweden. The study revealed that the concept using a total GaN layer thickness of 250 nm does not compromise the material quality and device performance.

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