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Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability, even under demanding high voltage and switching frequency conditions.
Infineon Technologies AG introduces its first generation of ISOFACE™ dual-channel digital isolators to meet the growing demand for robust high-voltage isolation.
The automotive-graded SiC MOSFET generation offers high power density and efficiency, enables bi-directional charging, and significantly reduces system cost in on-board charging and DC-DC applications.
Infineon Technologies AG is strengthening its market leadership in power semiconductors by adding manufacturing capacities in the field of wide bandgap (SiC and GaN) semiconductors.
