Items Tagged with 'GaN'

Infineon Technologies AG detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), February 25-29.

Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density. Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs.

Driven by the high margins of automotive, more M&As are expected in the rapidly evolving power GaN ecosystem.

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors.

Allegro’s new isolated gate driver creates a single-package solution that drives GaN field-effect transistors with up to a 50% smaller footprint and a 40% efficiency improvement compared to competitor offerings.

Patented set of technologies unleashes GaN to operate at up to 20 MHz for the first time without overheating or RF issues, opening up a vast new application area for GaN.

By augmenting its cascode offering with seven new e-mode devices, Nexperia now provides designers with the optimum choice of GaN FETs from a single supplier alongside its substantial portfolio of silicon-based power electronics components.

Infineon Technologies AG and GaN Systems announced that the companies have signed a definitive agreement under which Infineon will acquire GaN Systems for $830 million.

Infineon Technologies AG is strengthening its market leadership in power semiconductors by adding manufacturing capacities in the field of wide bandgap (SiC and GaN) semiconductors.